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Ivan Scheblykin. Portrait.

Ivan Scheblykin

Professor

Ivan Scheblykin. Portrait.

Relating Defect Luminescence and Nonradiative Charge Recombination in MAPbI3 Perovskite Films

Author

  • Alexander Dobrovolsky
  • Aboma Merdasa
  • Jun Li
  • Katrin Hirselandt
  • Eva L. Unger
  • Ivan G. Scheblykin

Summary, in English

Nonradiative losses in semiconductors are related to defects. At cryogenic temperatures, defect-related photoluminescence (PL) at energies lower than the band-edge PL is observed in methylammonium lead triiodide perovskite. We applied multispectral PL imaging to samples prepared by two different procedures and exhibiting 1 order of magnitude different PL quantum yield (PLQY). The high-PLQY sample showed concentration of the emitting defect sites around 1012-1013 cm-3. No correlation between PLQY and the relative intensity of the defect emission was found when micrometer-sized local regions of the same sample were compared. However, a clear positive correlation between the lower PLQY and higher defect emission was observed when two preparation methods were contrasted. Therefore, although the emissive defects are not connected directly with the nonradiative centers and may be spatially separated at the nano scale, chemical processes during the perovskite synthesis promote/prevent formation of both types of defects at the same time.

Department/s

  • Chemical Physics
  • NanoLund: Centre for Nanoscience

Publishing year

2020-03-05

Language

English

Pages

1714-1720

Publication/Series

Journal of Physical Chemistry Letters

Volume

11

Issue

5

Document type

Journal article

Publisher

The American Chemical Society (ACS)

Topic

  • Condensed Matter Physics (including Material Physics, Nano Physics)

Status

Published

ISBN/ISSN/Other

  • ISSN: 1948-7185