Ivan Scheblykin
Professor
Detection of Single Charge Trapping Defects in Semiconductor Particles by Evaluating Photon Antibunching in Delayed Photoluminescence
Author
Summary, in English
Time-resolved analysis of photon cross-correlation function g(2)(Ď„) is applied to photoluminescence (PL) of individual submicrometer size MAPbI3 perovskite crystals. Surprisingly, an antibunching effect in the long-living tail of PL is observed, while the prompt PL obeys the photon statistics typical for a classical emitter. We propose that antibunched photons from the PL decay tail originate from radiative recombination of detrapped charge carriers which were initially captured by a very limited number (down to one) of shallow defect states. The concentration of these trapping sites is estimated to be in the range 1013-1016 cm-3. In principle, photon correlations can be also caused by highly nonlinear Auger recombination processes; however, in our case it requires unrealistically large Auger recombination coefficients. The potential of the time-resolved g(2)(0) for unambiguous identification of charge rerecombination processes in semiconductors considering the actual number of charge carries and defects states per particle is demonstrated.
Department/s
- LTH Profile Area: Nanoscience and Semiconductor Technology
- Chemical Physics
- LTH Profile Area: Photon Science and Technology
- NanoLund: Centre for Nanoscience
Publishing year
2023
Language
English
Publication/Series
Nano Letters
Document type
Journal article
Publisher
The American Chemical Society (ACS)
Topic
- Condensed Matter Physics (including Material Physics, Nano Physics)
- Nano-technology
Keywords
- antibunching
- Auger recombination
- defect
- delayed photoluminescence
- single perovskite submicron crystals
- single trap detection
Status
Published
ISBN/ISSN/Other
- ISSN: 1530-6984