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Ivan Scheblykin. Portrait.

Ivan Scheblykin

Professor

Ivan Scheblykin. Portrait.

Detection of Single Charge Trapping Defects in Semiconductor Particles by Evaluating Photon Antibunching in Delayed Photoluminescence

Author

  • Ivan Yu Eremchev
  • Aleksandr O. Tarasevich
  • Maria A. Kniazeva
  • Jun Li
  • Andrei V. Naumov
  • Ivan G. Scheblykin

Summary, in English

Time-resolved analysis of photon cross-correlation function g(2)(Ď„) is applied to photoluminescence (PL) of individual submicrometer size MAPbI3 perovskite crystals. Surprisingly, an antibunching effect in the long-living tail of PL is observed, while the prompt PL obeys the photon statistics typical for a classical emitter. We propose that antibunched photons from the PL decay tail originate from radiative recombination of detrapped charge carriers which were initially captured by a very limited number (down to one) of shallow defect states. The concentration of these trapping sites is estimated to be in the range 1013-1016 cm-3. In principle, photon correlations can be also caused by highly nonlinear Auger recombination processes; however, in our case it requires unrealistically large Auger recombination coefficients. The potential of the time-resolved g(2)(0) for unambiguous identification of charge rerecombination processes in semiconductors considering the actual number of charge carries and defects states per particle is demonstrated.

Department/s

  • LTH Profile Area: Nanoscience and Semiconductor Technology
  • Chemical Physics
  • LTH Profile Area: Photon Science and Technology
  • NanoLund: Centre for Nanoscience

Publishing year

2023

Language

English

Publication/Series

Nano Letters

Document type

Journal article

Publisher

The American Chemical Society (ACS)

Topic

  • Condensed Matter Physics (including Material Physics, Nano Physics)
  • Nano-technology

Keywords

  • antibunching
  • Auger recombination
  • defect
  • delayed photoluminescence
  • single perovskite submicron crystals
  • single trap detection

Status

Published

ISBN/ISSN/Other

  • ISSN: 1530-6984