Transition Layer Assisted Synthesis of Defect Free Amine-Phosphine Based InP QDs

Summary, in English

Environmentally friendly InP-based quantum dots (QDs) are promising for light-emitting diodes (LEDs) and display applications. So far, the synthesis of highly emitting InP-based QDs via safe and economically viable amine-phosphine remains a challenge. Herein, we report the synthesis of amine-phosphine based InP/ZnSe/ZnS QDs by introducing an alloyed oxidation-free In-ZnSe transition layer (TL) at the core-shell interface. The TL not only has the essential function of preventing oxidation of the core and relieving interfacial strain but also results in oriented epitaxial growth of shell. The alloyed TL significantly mitigates the nonradiative recombination at core-shell interfacial trap states, thereby boosting the photoluminescence (PL) efficiency of the QDs up to 98%. Also, the Auger recombination is suppressed, extending the biexciton lifetime from 60 to 100 ps. The electroluminescence device based on the InP-based QDs shows a high external quantum efficiency over 10%, further demonstrating high quality QDs synthesized by this process.

• Author: Junfeng Wang; Guohang Ba; Jie Meng; Shixu Yang; Shuyu Tian; Mengqi Zhang; Fei Huang; Kaibo Zheng; Tõnu Pullerits; Jianjun Tian
• Department/s: LTH Profile Area: Nanoscience and Semiconductor Technology; LU Profile Area: Light and Materials; Chemical Physics; NanoLund: Centre for Nanoscience; LTH Profile Area: Photon Science and Technology; eSSENCE: The e-Science Collaboration
• Publishing year: 2024-07
• Language: English
• Pages: 8894-8901
• Publication/Series: Nano Letters
• Volume: 24
• Issue: 29
• Links: http://dx.doi.org/10.1021/acs.nanolett.4c01648
• Document type: Journal article
• Publisher: The American Chemical Society (ACS)
• Topic: Condensed Matter Physics (including Material Physics, Nano Physics); Nano-technology
• Keywords: amine-phosphine; InP quantum dot; oriented growth; transition layer
• Status: Published
• ISBN/ISSN/Other: ISSN: 1530-6984