Weihua Lin
Postdoctoral fellow
Defect State Assisted Z-scheme Charge Recombination in Bi2O2CO3/Graphene Quantum Dot Composites for Photocatalytic Oxidation of NO
Author
Summary, in English
In this work, we explored the photoinduced charge carriers dynamics rationalizing the photocatalytic oxidation of NO over N-doped Bi2O2CO3/graphene quantum dots composites(N-BOC/GQDs) via time-resolved photoluminescence (TRPL). Under visible light illumination, only GQDs can be photoexcited and inject electrons to N-BOC within 0.5 ns. Under UV light irradiation, the interfacial Z-scheme heterojunction recombination between the electrons in N-BOC and holes in GQDs dominate the depopulation of excited states within 0.36 ns. Such efficient Z-scheme recombination regardless of the large energy difference (1.66 eV) is mediated by the interfacial oxygen vacany defect states characterized by both density functional theory calculations (DFT) and electron paramagnetic resonance (EPR) measurement. This finding provide a novel strategic view to improve the photocatalytic performance of the nanocomposite by interfacial engineering
Department/s
- Chemical Physics
- NanoLund: Centre for Nanoscience
- eSSENCE: The e-Science Collaboration
Publishing year
2020
Language
English
Pages
772-781
Publication/Series
ACS Applied Nano Materials
Volume
3
Issue
1
Document type
Journal article
Publisher
The American Chemical Society (ACS)
Topic
- Nano-technology
- Condensed Matter Physics (including Material Physics, Nano Physics)
Keywords
- interfacial oxygen vacancy
- interfacial Z-scheme heterojunction
- NO oxdiation
- time-resolved spectroscopy
Status
Published
ISBN/ISSN/Other
- ISSN: 2574-0970