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Weihua Lin. Portrait.

Weihua Lin

Postdoctoral fellow

Weihua Lin. Portrait.

The piezotronic effect on carrier recombination processes in InGaN/GaN multiple quantum wells microwire

Author

  • Xianshao Zou
  • Jianqi Dong
  • Kang Zhang
  • Weihua Lin
  • Meiyuan Guo
  • Wei Zhang
  • Xingfu Wang

Summary, in English

Understanding piezotronic correlated carrier recombination behavior in quantum wells is essential for their applications. In this work, we have studied the influence of piezotronics on carrier recombination processes in single InGaN/GaN multiple quantum wells microwire (MQW-MW) by using steady-state and time-resolved spectroscopies. We conclude that mechanical strain induced piezotronics promotes the charge separation of excitons in space, and slows down the recombination rate of free carriers. The proposed model is supported by three independent experiments: photoluminescence experiment of MQW-MW before and after peel off, strain dependent TRPL experiment, and excitation fluency dependent PL intensity experiment. Our study could provide a guideline for the application of piezotronic in MQW-MW-based optoelectronic devices.

Department/s

  • Chemical Physics
  • NanoLund: Centre for Nanoscience

Publishing year

2021-09-01

Language

English

Publication/Series

Nano Energy

Volume

87

Document type

Journal article

Publisher

Elsevier

Topic

  • Condensed Matter Physics (including Material Physics, Nano Physics)

Keywords

  • Carrier dynamics
  • Charge trapping
  • InGaN/GaN MQWs
  • Microwires
  • Piezotronic effect
  • Time-resolved spectroscopy

Status

Published

ISBN/ISSN/Other

  • ISSN: 2211-2855